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Brand: Ingco Availability: In Stock
$7.75
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Quantity    Item    Description10    100 Ω    Resistor10    150 Ω &nbs..
$61.00
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$2.00
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$0.75
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FeaturesFloating channel designed for bootstrap operationFully operational to +500V or +600VTolerant to negative transient voltagedV/dt immuneGate dri..
$1.50
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Specification:Type: n-channelDrain-to-Source Breakdown Voltage: 60 VGate-to-Source Voltage, max: ±20 VDrain-Source On-State Resistance, max: 12.000 Oh..
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Specification:N-Channel Power MOSFETContinuous Drain Current (ID) is 110A when VGS is 10VMinimum Gate threshold voltage 2VDrain to Source Breakdown Vo..
$0.85
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Brand: Infineon and International Rectifier Availability: In Stock
DescriptionSpecification:N-Channel Power MOSFETContinuous Drain Current (ID) is 110A when VGS is 10VMinimum Gate threshold voltage 2VDrain to Source B..
$1.75
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Specification:N-Channel Power MOSFETMaximum Power Dissipation (Pd): 20 WMaximum Drain-Source Voltage |Vds|: 100 VMaximum Gate-Source Voltage |Vgs|: 20..
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Specification:N-Channel Power MOSFETContinuous Drain Current (ID): 9.2ADrain to Source Breakdown Voltage: 100VDrain Source Resistance (RDS) is 0.27 Oh..
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Specification:Small signal N-Channel MOSFETContinuous Drain Current (ID) is 33A at 25°CPulsed Drain Current (ID-peak) is 110AMinimum Gate threshold vo..
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Specification:Type Designator: IRF640Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 125 WMaximum Drain-S..
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