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- Availability: In Stock
- Weight: 0.01kg
- Package Size: 0.90cm x 0.80cm x 0.50cm
- SKU: ELE-ELC-122
Description
The TOSHIBA TLP350F consists of a GaAℓAs light-emitting diode and
an integrated photodetector.
This unit is an 8-lead DIP package.
The TLP350F is suitable for gate driving IGBTs or power MOSFETs.
Absolute maximum ratings and electrical characteristics are the same as
TLP350technical datasheet.
Peak output current: IO = ±2.5A (max)
Guaranteed performance over temperature: −40 to 100°C
Supply current:ICC = 2 mA (max)
Power supply voltage: VCC = 15 to 30 V
Threshold input current : IFLH = 5 mA (max)
Switching time (tpLH/tpHL) : 500 ns (max)
Common mode transient immunity: 15 kV/μs
Isolation voltage: 3750 Vrms
UL Recognized : UL1577,File No.E67349
Option(D4)
VDE Approved : DIN EN 60747-5-2
Maximum Operating Insulation Voltage : 1140VPK
Highest Permissible Over Voltage : 6000VPK
Delivery Within Lebanon
Shipping costs depend on the total weight of your order:
Up to and including 7 kg: USD 5.
Over 7 kg: USD 10, within our supported shipping limits.
In-stock orders are prepared promptly during our opening hours: Monday–Friday, 9:00–18:00. Orders received outside these hours are prepared on the next business day. Courier delivery usually takes 1–2 business days after dispatch.
International Shipping
We ship through Aramex and DHL, subject to destination and shipment availability. Shipping charges are calculated automatically at checkout. Delivery times vary by destination, carrier, and customs clearance.
Any applicable import duties and taxes are the customer’s responsibility unless otherwise stated.
Returns
All sales are final once confirmed and processed. Please review our Refund & Return Policy before ordering. Warranty support, where applicable, is handled separately.
For full details, see our Shipping Policy and Refund & Return Policy.