
IRF 840 N-Channel Power Mosfet
Description
Specification:
N-Channel Power MOSFET
Continuous Drain Current (ID): 8A
Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
Drain to Source Breakdown Voltage: 500V
Drain Source Resistance (RDS) is 0.85 Ohms
Rise time and fall time is 23nS and 20nS
Available in To-220 package
- Stock: In Stock
- Weight: 0.00kg
- Dimensions: 3.00cm x 1.00cm x 0.40cm
- SKU: ELE-ELC-043
from
$0.75
Ex Tax: $0.75
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