IRF 640 N-Channel Power Mosfet

Specification:
Type Designator: IRF640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 55 nC
Drain-Source Capacitance (Cd): 2100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO220