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IRF 520 N-Channel Power Mosfet

IRF 520 N-Channel Power Mosfet
IRF 520 N-Channel Power Mosfet

Description

Specification:
N-Channel Power MOSFET
Continuous Drain Current (ID): 9.2A
Drain to Source Breakdown Voltage: 100V
Drain Source Resistance (RDS) is 0.27 Ohms
Gate threshold voltage (VGS-th) is 4V (max)
Rise time and fall time is 30nS and 20nS
It is commonly used with Arduino, due to its low threshold voltage.
Available in To-220 package

  • Stock: In Stock
  • Weight: 0.00kg
  • Dimensions: 3.00cm x 1.00cm x 0.40cm
  • SKU: ELE-ELC-041
from
$0.75
Ex Tax: $0.75

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