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IRF 1010E - N-Channel Power Mosfet

IRF 1010E - N-Channel Power Mosfet
IRF 1010E - N-Channel Power Mosfet

Description

Specification:
Type: n-channel
Drain-to-Source Breakdown Voltage: 60 V
Gate-to-Source Voltage, max: ±20 V
Drain-Source On-State Resistance, max: 12.000 Ohm
Continuous Drain Current: 81 A
Total Gate Charge: 86.6 nC
Power Dissipation: 170 W
Package: TO-220AB

  • Stock: In Stock
  • Weight: 0.00kg
  • Dimensions: 3.00cm x 1.00cm x 0.40cm
  • SKU: ELE-ELC-086
from
$0.50
Ex Tax: $0.50

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