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BD 139 - NPN Epitaxial Silicon Transistor

BD 139 - NPN Epitaxial Silicon Transistor
BD 139 - NPN Epitaxial Silicon Transistor

Description

Specification:

Plastic casing NPN Transistor
Continuous Collector current (IC) is 1.5A
Collector-Emitter voltage (VCE) is 80 V
Collector-Base voltage (VCB) is 80V
Emitter Base Breakdown Voltage (VBE) is 5V
DC current gain (hfe) is 40 to 160
Available in To-225 package

  • Stock: In Stock
  • Weight: 0.00kg
  • Dimensions: 3.00cm x 1.00cm x 0.40cm
  • SKU: ELE-ELC-085
from
$0.15
Ex Tax: $0.15

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    3–10 working days (fees depend on weight/volume).

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