Electronic Components & ICs

FeaturesFloating channel designed for bootstrap operationFully operational to +500V or +600VTolerant to negative transient voltagedV/dt immuneGate dri..

Specification:Type: n-channelDrain-to-Source Breakdown Voltage: 60 VGate-to-Source Voltage, max: ±20 VDrain-Source On-State Resistance, max: 12.000 Oh..

Specification:N-Channel Power MOSFETContinuous Drain Current (ID) is 110A when VGS is 10VMinimum Gate threshold voltage 2VDrain to Source Breakdown Vo..

DescriptionSpecification:N-Channel Power MOSFETContinuous Drain Current (ID) is 110A when VGS is 10VMinimum Gate threshold voltage 2VDrain to Source B..

Specification:N-Channel Power MOSFETMaximum Power Dissipation (Pd): 20 WMaximum Drain-Source Voltage |Vds|: 100 VMaximum Gate-Source Voltage |Vgs|: 20..

Specification:N-Channel Power MOSFETContinuous Drain Current (ID): 9.2ADrain to Source Breakdown Voltage: 100VDrain Source Resistance (RDS) is 0.27 Oh..

Specification:Small signal N-Channel MOSFETContinuous Drain Current (ID) is 33A at 25°CPulsed Drain Current (ID-peak) is 110AMinimum Gate threshold vo..

Specification:Type Designator: IRF640Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 125 WMaximum Drain-S..

Specification:N-Channel Power MOSFETContinuous Drain Current (ID): 10AGate threshold voltage (VGS-th) is 10V (limit = ±20V)Drain to Source Breakdown V..

Specification:N-Channel Power MOSFETContinuous Drain Current (ID): 8AGate threshold voltage (VGS-th) is 10V (limit = ±20V)Drain to Source Breakdown Vo..

ApplicationsHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switched and High Frequency Ci..

Type Designator: IRFB4115Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 380 WMaximum Drain-Source Voltag..