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Electronic Components & ICs

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Features:The IC LM555CM - Timer is a precision timing circuit used to generate accurate time delays and timing pulses. It can be used in monostable or..
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IC Socket - Seat
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Insulated Tubular Crimp Connector Kit (400pcs, 8 Sizes) Insulated Tubular Crimp Connector Kit (400pcs, 8 Sizes)
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Features:This insulated tubular crimp connector kit includes 400 pieces across 8 wire gauge sizes, offering reliable performance for electrical wiring..
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FeaturesFloating channel designed for bootstrap operationFully operational to +500V or +600VTolerant to negative transient voltagedV/dt immuneGate dri..
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Specification:Type: n-channelDrain-to-Source Breakdown Voltage: 60 VGate-to-Source Voltage, max: ±20 VDrain-Source On-State Resistance, max: 12.000 Oh..
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IRF 3205 N-Channel Power Mosfet
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Specification:N-Channel Power MOSFETContinuous Drain Current (ID) is 110A when VGS is 10VMinimum Gate threshold voltage 2VDrain to Source Breakdown Vo..
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Brand: Infineon and International Rectifier Availability: In Stock
DescriptionSpecification:N-Channel Power MOSFETContinuous Drain Current (ID) is 110A when VGS is 10VMinimum Gate threshold voltage 2VDrain to Source B..
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Specification:N-Channel Power MOSFETMaximum Power Dissipation (Pd): 20 WMaximum Drain-Source Voltage |Vds|: 100 VMaximum Gate-Source Voltage |Vgs|: 20..
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Specification:N-Channel Power MOSFETContinuous Drain Current (ID): 9.2ADrain to Source Breakdown Voltage: 100VDrain Source Resistance (RDS) is 0.27 Oh..
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Specification:Small signal N-Channel MOSFETContinuous Drain Current (ID) is 33A at 25°CPulsed Drain Current (ID-peak) is 110AMinimum Gate threshold vo..
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Specification:Type Designator: IRF640Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 125 WMaximum Drain-S..
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Specification:N-Channel Power MOSFETContinuous Drain Current (ID): 10AGate threshold voltage (VGS-th) is 10V (limit = ±20V)Drain to Source Breakdown V..
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Specification:N-Channel Power MOSFETContinuous Drain Current (ID): 8AGate threshold voltage (VGS-th) is 10V (limit = ±20V)Drain to Source Breakdown Vo..
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ApplicationsHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switched and High Frequency Ci..
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Type Designator: IRFB4115Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 380 WMaximum Drain-Source Voltag..
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IRFP460N 20A 500V - N-Channel Mosfet
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ApplicationsSwitch Mode Power Supply (SMPS)Uninterruptable Power SupplyHigh speed power switchingBenefitsLow Gate Charge Qg results in SimpleDrive Req..
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Specification:Type Designator: IRFZ44Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 125 WMaximum Drain-S..
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